题目：Ambient Direct Lithography Patterning of Ultra-Stable Perovskite Quantum Dots for High-Resolution Light-Emitting Diodes

作者：Yonghuan Huo1, Chengzhao Luo1*, Chenglong Wu1,Zhenwei Ren1, Haoyu Wang1, Dongxu Zhu1*,Lei Wang1, Xin Zhou1, Zhiyong Zheng1, Xinwen Wang1, Yu Chen1,2*

单位：

1School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China

2National University of Singapore Suzhou Research Institute, Dushu Lake Science and Education Innovation District, Suzhou 215123, P. R. China


Abstract：Direct lithography enables precise micro-scale patterning of perovskite quantum dots (PQDs), which is essential for realizing high-resolution PQD light-emitting diodes (PQD-LEDs). However, achieving PQDs patterning under ambient conditions is challenging due to the sensitivity of PQDs to ambient environments, high doses of UV light, and light-generated side reactions during photolithography processes. Moreover, existing photosensitive ligands used in the direct lithography process can hardly achieve both good conductivity and satisfactory dispersibility of PQDs. To overcome these limitations, we engineer a versatile dual-ligand (vinyl phosphonic acid, VPA; 1,10-decanedithiol, DE) passivation strategy to realize high photosensitivity, dispersion and stability of PQDs (referred to as PQDs/VPA-DE) under ambient conditions. This innovative approach resulted in PQDs/VPA-DE with a high PLQY of up to 97.6%, compared to only 58.6% for pristine PQDs. Moreover, we successfully fabricate high-resolution (4233 pixels per inch, PPI), high-fidelity (approaching 99%), and multi-color (RGB) PQDs/VPA-DE pixels under ambient conditions. Furthermore, we demonstrate the feasibility of assembling high-resolution PQD/VPA-DE-LEDs using PQDs/VPA-DE pixels (1707 PPI) prepared under ambient conditions, with an EQE of 13.09% and a luminance of 29968 cd m-2, which is one of the highest values for high-resolution PQD-LEDs assembled under ambient conditions.


摘要：直接光刻技术可实现钙钛矿量子点 （PQD） 的精确微尺度图案化，这对于实现高分辨率PQD发光二极管 （PQD-LED） 至关重要。然而，由于PQD对周围环境、高剂量紫外光以及光刻过程中产生的光产生的副反应的敏感性，在环境条件下实现PQD图案化具有挑战性。此外，直接光刻工艺中使用的现有光敏配体很难同时实现PQD的良好导电性和令人满意的分散性。为了克服这些限制，设计了一种多功能的双配体（乙烯基膦酸，VPA;1,10-癸二硫醇，DE）钝化策略，以实现PQD在环境条件下的高光敏性、分散性和稳定性（称为PQD/VPA-DE）。这种创新方法使PQD/VPA-DE的PLQY高达97.6%，而原始PQD仅为58.6%。并且，还成功制造了环境条件下的高分辨率（每英寸4233像素，PPI）、高保真（接近99%）和多色 （RGB）PQD/VPA-DE像素。最后，使用在环境条件下制备的PQD/VPA-DE像素 （1707 PPI） 证明了组装高分辨率PQD/VPA-DE-LED的可行性，EQE为13.09%，亮度为29968 cd m-2，这是在环境条件下组装的高分辨率PQD-LED的最高值之一。

影响因子：18.5

分区情况：一区

链接: //doi.org/10.1002/adfm.202504261